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Typical Characteristics
200
100
100us
100
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
10
SINGLE PULSE
TJ = MAX RATED
10
STARTING T J = 25 o C
1
TC = 25oC
1ms
OPERATION IN THIS
AREA MAY BE
10ms
STARTING T J = 150 o C
0.1
1
LIMITED BY rDS(on) DC
10 100
V DS , DRAIN TO SOURCE VOLTAGE (V)
300
1
0.001
0.01 0.1 1 10
t AV , TIME IN AVALANCHE (ms)
100
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching
Capability
80
60
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V DD = 5V
80
60
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V GS = 10V
V GS = 8V
V GS = 7V
V GS = 6V
40
20
T J = 175 o C
T J = 25 o C
40
20
V GS = 5V
0
2.5
T J = -55 o C
3.0 3.5 4.0 4.5 5.0 5.5 6.0
6.5
0
0
1 2 3 4
5
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
100
80
I D = 44A
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
3.0
2.5
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
T J = 175 o C
60
2.0
40
20
T J = 25 o C
1.5
1.0
I D = 44A
0
5
6 7 8 9
V GS , GATE TO SOURCE VOLTAGE ( V )
10
0.6
-80
V GS = 10V
-40 0 40 80 120 160
T J , JUNCTION TEMPERATURE ( o C )
200
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDD3672_F085 Rev. C
5
www.fairchildsemi.com
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